Nano Dry Ice Semiconductor Cleaning Machine

Controlled temperature auxiliary gas, object surface no condensation;
Removal of foreign particles at micro and nano levels;
Micro-nano particles dry ice, small damage to objects;
No waste water, waste liquid generated;
No additional drying process, low power consumption;
Suitable for complex shapes;
Dry ice particle diameter: 0.5-1000 microns adjustable;
Optional online detection, graphical cleaning and other functions.

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  • Product Description

Equipment advantage

  • Controlled temperature auxiliary gas, object surface no condensation.

  • Removal of foreign particles at micro and nano levels.

  • Micro-nano particles dry ice, small damage.

  • No waste water, waste liquid generated.

  • No additional drying process, low power consumption.

  • Suitable for complex shapes.

  • Dry ice particles diameter: 0.5 1000 microns is adjustable.

  • Optional online detection, graphical cleaning and other functions.


Principle of cleaning technology

Principle of cleaning technology


Technology comparison

Class

No.

Cleaning

 method

Foreign body particle removal

Membrane 

layer  removal

Damage to the object

Drying 

process

Environmental 

pollution

Problem




Wet



1


Water


General


Worse


Genera


Need


Bad

Re-attachment of water membrane, metal element residues


2


Organic solvent


General


Better


Larger


Need


Large

Organic solvent then attached, solvent after 

treatment







Dry

3

Nano-dry ice

FineEasyLower--

Small cleaning area


4


Ultrasonic wave


General


Difficult


General


-


-

Solid foreign bodies, fine particles difficult to 

remove


5


Air


General


Difficult


General


-


-

Solid foreign bodies, fine particles difficult to 

remove

6

Atmospheric plasma

Easy

Difficult

Larger--

Poor cleaning ability


Equipment parameter

Model

Semiconductor cleaning machine WMGB01

Outline dimension
450×500×300
Weight

20Kg

Power supply

220V 50Hz single phase

Power

2kW

CO2 injection system

CO2

Liquid state

CO2 pressure≥5.5MPa
Nozzle specification

0.1mm~4mm

CO2  consumption50~200g/min

CO2 constant temperature system

Medium
-
Capacity-

Temperature regulation range

-

CO2 pressurization system

Driving medium

-
Driving air pressure
-
Boost ratio-

Boost volume

-
CDA auxiliary system
CDA gas
Compressed air/nitrogen
CDA pressure

0.1~0.8MPa

CDA temperature regulation

Optional



ProjectAppearanceHole cleaning effect (EDX test residue)

Holecleaning effect

(Aluminum layer thickness, SEM detection of aluminum layer)

Effect

Dry ice before cleaning

Surface whitening

Residue in holeAluminum layer 4.5um

——————

Surface whitening(1)

Residue in hole(1)


Aluminum layer 4.5um(1)

After dry ice cleaning


Clean surface


No residue in the hole


Aluminum layer 4.3um

①Ideal cleaning effect;

②No corrosion to aluminum layer;

③Binding force5.2N/cm.

Clean surface

No residue in the hole

Aluminum layer 4.3um

After high-pressure water gun cleaning


Clean surface


Inside the hole are copper chips


Aluminum layer 4.5um

①Ideal cleaning effect;

②Inside the hole are copper chips;

③Binding force 4.5N/cm.

Clean surface2


Inside the hole are copper chips

Aluminum layer 4.5um2


Project

Hole cleaning effect (EDX detection residue)

Dry ice before 

cleaning

123

Elemental analysis

Dry ice before cleaning1
Dry ice before cleaning2Dry ice before cleaning3Elemental analysis
After dry ice cleaning123Elemental analysis
After dry ice cleaning1After dry ice cleaning2After dry ice cleaning3Elemental analysis2

After the high-pressure water 

gun cleaning

123

Elemental analysis

(Include Cu)

After the high-pressure water gun cleaning1After the high-pressure water gun cleaning2After the high-pressure water gun cleaning3Elemental analysis(Include Cu)



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